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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V characteristics and transient capacitance were mea...

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Detalles Bibliográficos
Autores principales:	Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147414/ https://www.ncbi.nlm.nih.gov/pubmed/35630215 http://dx.doi.org/10.3390/mi13050748

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