Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect density (TDD) was successfully decreased from 2.9 × 10(...

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Detalles Bibliográficos
Autores principales: Xu, Buqing, Du, Yong, Wang, Guilei, Xiong, Wenjuan, Kong, Zhenzhen, Zhao, Xuewei, Miao, Yuanhao, Wang, Yijie, Lin, Hongxiao, Su, Jiale, Li, Ben, Wu, Yuanyuan, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147913/
https://www.ncbi.nlm.nih.gov/pubmed/35629618
http://dx.doi.org/10.3390/ma15103594

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147913/
https://www.ncbi.nlm.nih.gov/pubmed/35629618
http://dx.doi.org/10.3390/ma15103594

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