Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO(3)/SrTiO(3) heterostructures

Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably cause...

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Detalles Bibliográficos
Autores principales: Lee, Sunwoo, Jeon, Jaeyoung, Eom, Kitae, Jeong, Chaehwa, Yang, Yongsoo, Park, Ji-Yong, Eom, Chang-Beom, Lee, Hyungwoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9156742/
https://www.ncbi.nlm.nih.gov/pubmed/35641608
http://dx.doi.org/10.1038/s41598-022-13121-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9156742/
https://www.ncbi.nlm.nih.gov/pubmed/35641608
http://dx.doi.org/10.1038/s41598-022-13121-4

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