Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimo...

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Detalles Bibliográficos
Autores principales: Tournié, Eric, Monge Bartolome, Laura, Rio Calvo, Marta, Loghmari, Zeineb, Díaz-Thomas, Daniel A., Teissier, Roland, Baranov, Alexei N., Cerutti, Laurent, Rodriguez, Jean-Baptiste
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Review Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9160057/
https://www.ncbi.nlm.nih.gov/pubmed/35650192
http://dx.doi.org/10.1038/s41377-022-00850-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9160057/
https://www.ncbi.nlm.nih.gov/pubmed/35650192
http://dx.doi.org/10.1038/s41377-022-00850-4

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