Towards n-type conductivity in hexagonal boron nitride

Asymmetric transport characteristic in n- and p-type conductivity has long been a fundamental difficulty in wide bandgap semiconductors. Hexagonal boron nitride (h-BN) can achieve p-type conduction, however, the n-type conductivity still remains unavailable. Here, we demonstrate a concept of orbital...

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Detalles Bibliográficos
Autores principales: Lu, Shiqiang, Shen, Peng, Zhang, Hongye, Liu, Guozhen, Guo, Bin, Cai, Yehang, Chen, Han, Xu, Feiya, Zheng, Tongchang, Xu, Fuchun, Chen, Xiaohong, Cai, Duanjun, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9166779/
https://www.ncbi.nlm.nih.gov/pubmed/35661712
http://dx.doi.org/10.1038/s41467-022-30762-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9166779/
https://www.ncbi.nlm.nih.gov/pubmed/35661712
http://dx.doi.org/10.1038/s41467-022-30762-1

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