Pristine PN junction toward atomic layer devices

In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an in...

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Detalles Bibliográficos
Autores principales: Xia, Hui, Luo, Man, Wang, Wenjing, Wang, Hailu, Li, Tianxin, Wang, Zhen, Xu, Hangyu, Chen, Yue, Zhou, Yong, Wang, Fang, Xie, Runzhang, Wang, Peng, Hu, Weida, Lu, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9167816/
https://www.ncbi.nlm.nih.gov/pubmed/35661682
http://dx.doi.org/10.1038/s41377-022-00814-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9167816/
https://www.ncbi.nlm.nih.gov/pubmed/35661682
http://dx.doi.org/10.1038/s41377-022-00814-8

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