Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems

Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based light emitting diode (LED) structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems...

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Detalles Bibliográficos
Autores principales: O’Donovan, Michael, Farrell, Patricio, Streckenbach, Timo, Koprucki, Thomas, Schulz, Stefan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9170672/
https://www.ncbi.nlm.nih.gov/pubmed/35694654
http://dx.doi.org/10.1007/s11082-022-03752-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9170672/
https://www.ncbi.nlm.nih.gov/pubmed/35694654
http://dx.doi.org/10.1007/s11082-022-03752-2

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