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Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems
Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based light emitting diode (LED) structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9170672/ https://www.ncbi.nlm.nih.gov/pubmed/35694654 http://dx.doi.org/10.1007/s11082-022-03752-2 |