Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The simulations reveal that...

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Detalles Bibliográficos
Autores principales: Qu, Yongfeng, Deng, Ningkang, Yuan, Yuan, Hu, Wenbo, Liu, Hongxia, Wu, Shengli, Wang, Hongxing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181770/
https://www.ncbi.nlm.nih.gov/pubmed/35683115
http://dx.doi.org/10.3390/ma15113818

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181770/
https://www.ncbi.nlm.nih.gov/pubmed/35683115
http://dx.doi.org/10.3390/ma15113818

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