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Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation
The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The simulations reveal that...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181770/ https://www.ncbi.nlm.nih.gov/pubmed/35683115 http://dx.doi.org/10.3390/ma15113818 |
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author | Qu, Yongfeng Deng, Ningkang Yuan, Yuan Hu, Wenbo Liu, Hongxia Wu, Shengli Wang, Hongxing |
author_facet | Qu, Yongfeng Deng, Ningkang Yuan, Yuan Hu, Wenbo Liu, Hongxia Wu, Shengli Wang, Hongxing |
author_sort | Qu, Yongfeng |
collection | PubMed |
description | The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The simulations reveal that the DMG structure devices have a 10-percent higher transconductance than the SMG structure devices when the self-heating effect is considered. In the meantime, employing the DMG structure, a decrease of more than 11% in the maximum temperature rise of the devices can be achieved at the power density of 6 W/mm. Furthermore, the peak in heat generation distribution at the gate edge of the devices is reduced using this structure. These results could be attributed to the change in the electric field distribution at the gate region and the suppression of the self-heating effect. Therefore, the electrical and thermal performances of AlGaN/GaN HEMT devices are improved by adopting the DMG structure. |
format | Online Article Text |
id | pubmed-9181770 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-91817702022-06-10 Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation Qu, Yongfeng Deng, Ningkang Yuan, Yuan Hu, Wenbo Liu, Hongxia Wu, Shengli Wang, Hongxing Materials (Basel) Article The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The simulations reveal that the DMG structure devices have a 10-percent higher transconductance than the SMG structure devices when the self-heating effect is considered. In the meantime, employing the DMG structure, a decrease of more than 11% in the maximum temperature rise of the devices can be achieved at the power density of 6 W/mm. Furthermore, the peak in heat generation distribution at the gate edge of the devices is reduced using this structure. These results could be attributed to the change in the electric field distribution at the gate region and the suppression of the self-heating effect. Therefore, the electrical and thermal performances of AlGaN/GaN HEMT devices are improved by adopting the DMG structure. MDPI 2022-05-27 /pmc/articles/PMC9181770/ /pubmed/35683115 http://dx.doi.org/10.3390/ma15113818 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Qu, Yongfeng Deng, Ningkang Yuan, Yuan Hu, Wenbo Liu, Hongxia Wu, Shengli Wang, Hongxing Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation |
title | Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation |
title_full | Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation |
title_fullStr | Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation |
title_full_unstemmed | Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation |
title_short | Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation |
title_sort | electrical and thermal characteristics of algan/gan hemt devices with dual metal gate structure: a theoretical investigation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181770/ https://www.ncbi.nlm.nih.gov/pubmed/35683115 http://dx.doi.org/10.3390/ma15113818 |
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