Formation of GeO(2) under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor

The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penet...

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Detalles Bibliográficos
Autores principales: Dumiszewska, Ewa, Ciepielewski, Paweł, Caban, Piotr A., Jóźwik, Iwona, Gaca, Jaroslaw, Baranowski, Jacek M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181917/
https://www.ncbi.nlm.nih.gov/pubmed/35684572
http://dx.doi.org/10.3390/molecules27113636

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181917/
https://www.ncbi.nlm.nih.gov/pubmed/35684572
http://dx.doi.org/10.3390/molecules27113636

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