Electric Transport in Few-Layer ReSe(2) Transistors Modulated by Air Pressure and Light

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe(2). The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe(2) nanosheet. We show that the optoelectronic performance of these FETs...

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Detalles Bibliográficos
Autores principales: Faella, Enver, Intonti, Kimberly, Viscardi, Loredana, Giubileo, Filippo, Kumar, Arun, Lam, Hoi Tung, Anastasiou, Konstantinos, Craciun, Monica F., Russo, Saverio, Di Bartolomeo, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9182458/
https://www.ncbi.nlm.nih.gov/pubmed/35683748
http://dx.doi.org/10.3390/nano12111886

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9182458/
https://www.ncbi.nlm.nih.gov/pubmed/35683748
http://dx.doi.org/10.3390/nano12111886

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