Fabrication and Characterization of a Self-Powered n-Bi(2)Se(3)/p-Si Nanowire Bulk Heterojunction Broadband Photodetector

In the present study, vacuum evaporation method is used to deposit Bi(2)Se(3) film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3...

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Detalles Bibliográficos
Autores principales: Wang, Xuan, Tang, Yehua, Wang, Wanping, Zhao, Hao, Song, Yanling, Kang, Chaoyang, Wang, Kefan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9182573/
https://www.ncbi.nlm.nih.gov/pubmed/35683678
http://dx.doi.org/10.3390/nano12111824

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9182573/
https://www.ncbi.nlm.nih.gov/pubmed/35683678
http://dx.doi.org/10.3390/nano12111824

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