Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO(2) Ferroelectric Capacitor

The endurance characteristic of Zr-doped HfO(2) (HZO)-based metal–ferroelectric–metal (MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic layer deposition (ALD) process was investigated. The chamber temperature in the ALD process was set to 120 °C, 200 °C, or 25...

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Detalles Bibliográficos
Autores principales: Choi, Yejoo, Han, Changwoo, Shin, Jaemin, Moon, Seungjun, Min, Jinhong, Park, Hyeonjung, Eom, Deokjoon, Lee, Jehoon, Shin, Changhwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9185304/
https://www.ncbi.nlm.nih.gov/pubmed/35684705
http://dx.doi.org/10.3390/s22114087

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9185304/
https://www.ncbi.nlm.nih.gov/pubmed/35684705
http://dx.doi.org/10.3390/s22114087

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