Cargando…

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO(2) Ferroelectric Capacitor

The endurance characteristic of Zr-doped HfO(2) (HZO)-based metal–ferroelectric–metal (MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic layer deposition (ALD) process was investigated. The chamber temperature in the ALD process was set to 120 °C, 200 °C, or 25...

Descripción completa

Detalles Bibliográficos
Autores principales:	Choi, Yejoo, Han, Changwoo, Shin, Jaemin, Moon, Seungjun, Min, Jinhong, Park, Hyeonjung, Eom, Deokjoon, Lee, Jehoon, Shin, Changhwan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9185304/ https://www.ncbi.nlm.nih.gov/pubmed/35684705 http://dx.doi.org/10.3390/s22114087

Ejemplares similares

Improved remnant polarization of Zr-doped HfO(2) ferroelectric film by CF(4)/O(2) plasma passivation
por: Choi, Yejoo, et al.
Publicado: (2022)

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO(2)/Al(2)O(3) Superlattice on Transparent ITO/Glass Substrate
por: Choi, Yejoo, et al.
Publicado: (2020)

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
por: Yoon, Chankeun, et al.
Publicado: (2020)

Oxygen scavenging of HfZrO(2)-based capacitors for improving ferroelectric properties
por: Kim, Bong Ho, et al.
Publicado: (2022)

Low-Frequency Noise Characteristics in HfO(2)-Based Metal-Ferroelectric-Metal Capacitors
por: Im, Ki-Sik, et al.
Publicado: (2022)

Improved Ferroelectric Properties in Hf(0.5)Zr(0.5)O(2) Thin Films by Microwave Annealing
por: Zhao, Biyao, et al.
Publicado: (2022)

Improved Endurance of Ferroelectric Hf(0.5)Zr(0.5)O(2) Using Laminated-Structure Interlayer
por: Chen, Meiwen, et al.
Publicado: (2023)

Ferroelectric-Antiferroelectric Transition of Hf(1–x)Zr(x)O(2) on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf(0.2)Zr(0.8)O(2)
por: Dahlberg, Hannes, et al.
Publicado: (2022)

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO(2) Films
por: Jang, Chan-Hee, et al.
Publicado: (2022)

On the switching dynamics of epitaxial ferroelectric CeO(2)–HfO(2) thin film capacitors
por: Cüppers, Felix, et al.
Publicado: (2022)

Transparent Ferroelectric Capacitors on Glass
por: Sette, Daniele, et al.
Publicado: (2017)

Superhigh energy storage density on-chip capacitors with ferroelectric Hf(0.5)Zr(0.5)O(2)/antiferroelectric Hf(0.25)Zr(0.75)O(2) bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition
por: He, Yuli, et al.
Publicado: (2022)

THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO(2)
por: Abdulazhanov, Sukhrob, et al.
Publicado: (2022)

Polarization fatigue of organic ferroelectric capacitors
por: Zhao, Dong, et al.
Publicado: (2014)

Ferroelectric Orthorhombic ZrO(2) Thin Films Achieved Through Nanosecond Laser Annealing
por: Crema, Anna P. S., et al.
Publicado: (2023)

Ti insertion in the MTe(5) (M = Zr, Hf) structure type: Hf(0.78)Ti(0.22)Te(5)
por: Yu, Jaemin, et al.
Publicado: (2012)

Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf(1–x)Zr(x)O(2)
por: Athle, Robin, et al.
Publicado: (2021)

Interface-engineered ferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films
por: Shi, Shu, et al.
Publicado: (2023)

Wake-Up Free Ultrathin Ferroelectric Hf(0.5)Zr(0.5)O(2) Films
por: Chouprik, Anastasia, et al.
Publicado: (2023)

Unravelling and controlling hidden imprint fields in ferroelectric capacitors
por: Liu, Fanmao, et al.
Publicado: (2016)

Anti-Ferroelectric Ceramics for High Energy Density Capacitors
por: Chauhan, Aditya, et al.
Publicado: (2015)

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf(0.5)Zr(0.5)O(2)
por: Chouprik, Anastasia, et al.
Publicado: (2022)

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors
por: Song, Seul Ji, et al.
Publicado: (2016)

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
por: Tian, Bo Bo, et al.
Publicado: (2015)

Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors
por: Do, M. T., et al.
Publicado: (2020)

Ferroelectric Switching in Trilayer Al(2)O(3)/HfZrO(x)/Al(2)O(3) Structure
por: Im, Solyee, et al.
Publicado: (2020)

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf(0.5)Zr(0.5)O(2) Tunnel Junctions
por: Long, Xiao, et al.
Publicado: (2023)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
por: Baek, Sungpyo, et al.
Publicado: (2022)

Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
por: Zheng, Meijuan, et al.
Publicado: (2017)

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
por: He, Yuli, et al.
Publicado: (2023)

Inductive crystallization effect of atomic-layer-deposited Hf(0.5)Zr(0.5)O(2) films for ferroelectric application
por: Zhang, Xun, et al.
Publicado: (2015)

Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf(1−x)Zr(x)O(2) Diodes
por: Hsiang, Kuo-Yu, et al.
Publicado: (2021)

Re-evaluation of the Energy Density Properties of VDF Ferroelectric Thin-Film Capacitors
por: Tsutsumi, Naoto, et al.
Publicado: (2020)

Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor
por: Zhong, Qilan, et al.
Publicado: (2021)

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes
por: Khakimov, Roman R., et al.
Publicado: (2022)

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO(2) Insets
por: Koroleva, Aleksandra A., et al.
Publicado: (2022)

Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
por: Song, Ji-Na, et al.
Publicado: (2023)

Dielectric Enhancement of Atomic Layer-Deposited Al(2)O(3)/ZrO(2)/Al(2)O(3) MIM Capacitors by Microwave Annealing
por: Zhu, Bao, et al.
Publicado: (2019)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022)
por: Baek, Sungpyo, et al.
Publicado: (2022)

Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
por: Zhang, Siqing, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_o3mvfpi5so3ij9bkr9gegj37gf