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Pseudo-Static Gain Cell of Embedded DRAM for Processing-in-Memory in Intelligent IoT Sensor Nodes
This paper presents a pseudo-static gain cell (PS-GC) with extended retention time for an embedded dynamic random-access memory (eDRAM) macro for analog processing-in-memory (PIM). The proposed eDRAM cell consists of a two-transistor (2T) gain cell with a pseudo-static leakage compensation that main...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9185588/ https://www.ncbi.nlm.nih.gov/pubmed/35684905 http://dx.doi.org/10.3390/s22114284 |