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Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

[Image: see text] The ability to control the polarity of an all-sputtered epitaxial GaN/AlN/Al film on a Si(111) substrate via intermediate oxidization was investigated. A stable surface of GaN on a Si substrate is a N-terminated surface (−c surface); hence, for electric device applications, the Ga-...

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Detalles Bibliográficos
Autores principales: Nagata, Takahiro, Suemoto, Yuya, Ueoka, Yoshihiro, Mesuda, Masami, Sang, Liwen, Chikyow, Toyohiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9202052/
https://www.ncbi.nlm.nih.gov/pubmed/35721998
http://dx.doi.org/10.1021/acsomega.2c00957