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Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization
[Image: see text] The ability to control the polarity of an all-sputtered epitaxial GaN/AlN/Al film on a Si(111) substrate via intermediate oxidization was investigated. A stable surface of GaN on a Si substrate is a N-terminated surface (−c surface); hence, for electric device applications, the Ga-...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9202052/ https://www.ncbi.nlm.nih.gov/pubmed/35721998 http://dx.doi.org/10.1021/acsomega.2c00957 |