Electroforming-free threshold switching of NbO(x)–based selector devices by controlling conducting phases in the NbO(x) layer for the application to crossbar array architectures

Bipolar threshold switching characteristics, featuring volatile transition between the high-resistance state (HRS) at lower voltage than threshold voltage (V(th)) and the low-resistance state (LRS) at higher voltage irrespective of the voltage polarity, are investigated in the Nb(O)/NbO(x)/Nb(O) dev...

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Detalles Bibliográficos
Autores principales: Park, Kitae, Ryu, Jiyeon, Sahu, Dwipak Prasad, Kim, Hyun-Mi, Yoon, Tae-Sik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9219044/
https://www.ncbi.nlm.nih.gov/pubmed/35799917
http://dx.doi.org/10.1039/d2ra02930h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9219044/
https://www.ncbi.nlm.nih.gov/pubmed/35799917
http://dx.doi.org/10.1039/d2ra02930h

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