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Electroforming-free threshold switching of NbO(x)–based selector devices by controlling conducting phases in the NbO(x) layer for the application to crossbar array architectures
Bipolar threshold switching characteristics, featuring volatile transition between the high-resistance state (HRS) at lower voltage than threshold voltage (V(th)) and the low-resistance state (LRS) at higher voltage irrespective of the voltage polarity, are investigated in the Nb(O)/NbO(x)/Nb(O) dev...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9219044/ https://www.ncbi.nlm.nih.gov/pubmed/35799917 http://dx.doi.org/10.1039/d2ra02930h |