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Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device
Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical m...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227092/ https://www.ncbi.nlm.nih.gov/pubmed/35744259 http://dx.doi.org/10.3390/ma15124201 |