Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate

Recently, tin oxide (SnO(2)) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (V(O)) concentration leads to poor performance of SnO(2) thin...

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Detalles Bibliográficos
Autores principales: He, Ziyan, Zhang, Xu, Wei, Xiaoqin, Luo, Dongxiang, Ning, Honglong, Ye, Qiannan, Wu, Renxu, Guo, Yao, Yao, Rihui, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227204/
https://www.ncbi.nlm.nih.gov/pubmed/35736297
http://dx.doi.org/10.3390/membranes12060590

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227204/
https://www.ncbi.nlm.nih.gov/pubmed/35736297
http://dx.doi.org/10.3390/membranes12060590

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