Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the displa...

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Detalles Bibliográficos
Autores principales: Wang, Yunping, Zhou, Yuheng, Xia, Zhihe, Zhou, Wei, Zhang, Meng, Yeung, Fion Sze Yan, Wong, Man, Kwok, Hoi Sing, Zhang, Shengdong, Lu, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227547/
https://www.ncbi.nlm.nih.gov/pubmed/35744453
http://dx.doi.org/10.3390/mi13060839

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227547/
https://www.ncbi.nlm.nih.gov/pubmed/35744453
http://dx.doi.org/10.3390/mi13060839

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