Artificial Synapse Consisted of TiSbTe/SiC(x):H Memristor with Ultra-high Uniformity for Neuromorphic Computing

To enable a-SiC(x):H-based memristors to be integrated into brain-inspired chips, and to efficiently deal with the massive and diverse data, high switching uniformity of the a-SiC(0.11):H memristor is urgently needed. In this study, we introduced a TiSbTe layer into an a-SiC(0.11):H memristor, and s...

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Detalles Bibliográficos
Autores principales: Chen, Liangliang, Ma, Zhongyuan, Leng, Kangmin, Chen, Tong, Hu, Hongsheng, Yang, Yang, Li, Wei, Xu, Jun, Xu, Ling, Chen, Kunji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227692/
https://www.ncbi.nlm.nih.gov/pubmed/35745449
http://dx.doi.org/10.3390/nano12122110

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227692/
https://www.ncbi.nlm.nih.gov/pubmed/35745449
http://dx.doi.org/10.3390/nano12122110

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