XPS Study in BiFeO(3) Surface Modified by Argon Etching

This paper reports an XPS surface study of pure phase BiFeO [Formula: see text] thin film produced and later etched by pure argon ions. Analysis of high-resolution spectra from Fe [Formula: see text] , Bi [Formula: see text] and [Formula: see text] , O [Formula: see text] , and the valence band, exhibited mainly Fe [Formula: see text] and Bi [Formula: see text] components, but also reveal Fe [Formula: see text]. High-energy argon etching induces the growth of Fe [Formula: see text] and Bi [Formula: see text] and an increment of Fe [Formula: see text] , as expected. The BiFeO [Formula: see text] semiconductor character is preserved despite the oxygen loss, an interesting aspect for the study of the photovoltaic effect through oxygen vacancies in some ceramic films. The metal-oxygen bonds in O [Formula: see text] spectra are related only to one binding energy contrary to the split from bismuth and iron reported in other works. All these data evidence that the low-pressure argon atmosphere is proved to be efficient to produce pure phase BiFeO [Formula: see text] , even after argon etching.