Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures

Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films’ surface morphology qualities and optical properties were studied by utilising tr...

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Detalles Bibliográficos
Autores principales: Albarkaty, Kheir S., Kumi-Barimah, Eric, Zhang, Jian, Yang, Zhiyong, Jose, Gin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228077/
https://www.ncbi.nlm.nih.gov/pubmed/35745342
http://dx.doi.org/10.3390/nano12122003

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228077/
https://www.ncbi.nlm.nih.gov/pubmed/35745342
http://dx.doi.org/10.3390/nano12122003

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