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Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures
Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films’ surface morphology qualities and optical properties were studied by utilising tr...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228077/ https://www.ncbi.nlm.nih.gov/pubmed/35745342 http://dx.doi.org/10.3390/nano12122003 |