Experimentally-Verified Modeling of InGaAs Quantum Dots

We develop a model of an epitaxial self-organized InGaAs quantum dot buried in GaAs, which takes into account experimentally determined indium distribution inside the QD, its geometry and crystallography. The problem of solid mechanics was solved to determine the stress-strain field. Then, the param...

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Detalles Bibliográficos
Autores principales: Kosarev, Alexander N., Chaldyshev, Vladimir V., Cherkashin, Nikolay
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228084/
https://www.ncbi.nlm.nih.gov/pubmed/35745307
http://dx.doi.org/10.3390/nano12121967

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228084/
https://www.ncbi.nlm.nih.gov/pubmed/35745307
http://dx.doi.org/10.3390/nano12121967

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