Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range

Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10(−3) Ω·cm for the as-deposited film to the low...

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Detalles Bibliográficos
Autores principales: Zhao, Ming-Jie, Zhang, Jin-Fa, Huang, Jie, Chen, Zuo-Zhu, Xie, An, Wu, Wan-Yu, Huang, Chien-Jung, Wuu, Dong-Sing, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228352/
https://www.ncbi.nlm.nih.gov/pubmed/35745334
http://dx.doi.org/10.3390/nano12121995

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228352/
https://www.ncbi.nlm.nih.gov/pubmed/35745334
http://dx.doi.org/10.3390/nano12121995

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