Cargando…
Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range
Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10(−3) Ω·cm for the as-deposited film to the low...
| Autores principales: | , , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228352/ https://www.ncbi.nlm.nih.gov/pubmed/35745334 http://dx.doi.org/10.3390/nano12121995 |