Pt Modified Sb(2)Te(3) Alloy Ensuring High−Performance Phase Change Memory

Phase change memory (PCM), due to the advantages in capacity and endurance, has the opportunity to become the next generation of general−purpose memory. However, operation speed and data retention are still bottlenecks for PCM development. The most direct way to solve this problem is to find a mater...

Descripción completa

Detalles Bibliográficos
Autores principales: Qiao, Yang, Zhao, Jin, Sun, Haodong, Song, Zhitang, Xue, Yuan, Li, Jiao, Song, Sannian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9229571/
https://www.ncbi.nlm.nih.gov/pubmed/35745335
http://dx.doi.org/10.3390/nano12121996

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9229571/
https://www.ncbi.nlm.nih.gov/pubmed/35745335
http://dx.doi.org/10.3390/nano12121996

Ejemplares similares