A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench

In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented. A relatively high HK dielectric is in the upper trench, which is connected with the drain electrode to suppress the high electric fiel...

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Detalles Bibliográficos
Autores principales: Cao, Zhen, Sun, Qi, Zhang, Hongwei, Wang, Qian, Ma, Chuanfeng, Jiao, Licheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9229741/
https://www.ncbi.nlm.nih.gov/pubmed/35744457
http://dx.doi.org/10.3390/mi13060843

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9229741/
https://www.ncbi.nlm.nih.gov/pubmed/35744457
http://dx.doi.org/10.3390/mi13060843

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