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A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench
In this paper, a novel high voltage superjunction lateral double diffused MOSFETs (SJ-LDMOS) using a variable high permittivity (VHK) dielectric trench is presented. A relatively high HK dielectric is in the upper trench, which is connected with the drain electrode to suppress the high electric fiel...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9229741/ https://www.ncbi.nlm.nih.gov/pubmed/35744457 http://dx.doi.org/10.3390/mi13060843 |