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Effect of Substrate-RF on Sub-200 nm Al(0.7)Sc(0.3)N Thin Films

Sc-doped aluminum nitride is emerging as a new piezoelectric material which can substitute undoped aluminum nitride (AlN) in radio-frequency MEMS applications, thanks to its demonstrated enhancement of the piezoelectric coefficients. Furthermore, the recent demonstration of the ferroelectric-switchi...

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Detalles Bibliográficos
Autores principales:	Pirro, Michele, Zhao, Xuanyi, Herrera, Bernard, Simeoni, Pietro, Rinaldi, Matteo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230010/ https://www.ncbi.nlm.nih.gov/pubmed/35744493 http://dx.doi.org/10.3390/mi13060877

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