Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates

The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mis...

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Detalles Bibliográficos
Autores principales: Dvoretckaia, Liliia, Gridchin, Vladislav, Mozharov, Alexey, Maksimova, Alina, Dragunova, Anna, Melnichenko, Ivan, Mitin, Dmitry, Vinogradov, Alexandr, Mukhin, Ivan, Cirlin, Georgy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230727/
https://www.ncbi.nlm.nih.gov/pubmed/35745332
http://dx.doi.org/10.3390/nano12121993

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230727/
https://www.ncbi.nlm.nih.gov/pubmed/35745332
http://dx.doi.org/10.3390/nano12121993

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