Cargando…

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates

The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mis...

Descripción completa

Detalles Bibliográficos
Autores principales:	Dvoretckaia, Liliia, Gridchin, Vladislav, Mozharov, Alexey, Maksimova, Alina, Dragunova, Anna, Melnichenko, Ivan, Mitin, Dmitry, Vinogradov, Alexandr, Mukhin, Ivan, Cirlin, Georgy
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230727/ https://www.ncbi.nlm.nih.gov/pubmed/35745332 http://dx.doi.org/10.3390/nano12121993

Ejemplares similares

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
por: Gridchin, Vladislav O., et al.
Publicado: (2022)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
por: Wang, Sheng-Wen, et al.
Publicado: (2017)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
por: Kochetkov, Fedor M., et al.
Publicado: (2021)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
por: Jegenyes, Nikoletta, et al.
Publicado: (2018)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes
por: Lei, Po-Hsun, et al.
Publicado: (2021)

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
por: Bolshakov, Alexey D, et al.
Publicado: (2018)

Photoluminescence Redistribution of InGaN Nanowires Induced by Plasmonic Silver Nanoparticles
por: Shugabaev, Talgat, et al.
Publicado: (2023)

Blue light emission from the heterostructured ZnO/InGaN/GaN
por: Wang, Ti, et al.
Publicado: (2013)

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
por: Sousa, Marco A., et al.
Publicado: (2015)

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities
por: Puchtler, Tim J., et al.
Publicado: (2014)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser
por: Xie, Wuze, et al.
Publicado: (2019)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
por: Meier, Johanna, et al.
Publicado: (2022)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells
por: Chouchen, Bilel, et al.
Publicado: (2019)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
por: Zhu, Yadan, et al.
Publicado: (2017)

InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
por: Deng, Zejia, et al.
Publicado: (2019)

Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
por: Pasayat, Shubhra S., et al.
Publicado: (2020)

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures
por: Park, Bumsu, et al.
Publicado: (2022)

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires
por: Park, Ji-Hyeon, et al.
Publicado: (2016)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
por: Kundys, Dmytro, et al.
Publicado: (2016)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_anrr11jm4ddlaqp3d00heejjat