Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test

To investigate the critical specifications of a power amplifier (PA) under rapidly changing temperature conditions, we fabricated and tested a 0.3–1.1 GHz complementary metal–oxide–semiconductor (CMOS) PA under thermal shock tests. The results show that high- and low-temperature shocks can accelerat...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhou, Shaohua, Yang, Cheng, Wang, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230987/
https://www.ncbi.nlm.nih.gov/pubmed/35744429
http://dx.doi.org/10.3390/mi13060815

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230987/
https://www.ncbi.nlm.nih.gov/pubmed/35744429
http://dx.doi.org/10.3390/mi13060815

Ejemplares similares