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Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test
To investigate the critical specifications of a power amplifier (PA) under rapidly changing temperature conditions, we fabricated and tested a 0.3–1.1 GHz complementary metal–oxide–semiconductor (CMOS) PA under thermal shock tests. The results show that high- and low-temperature shocks can accelerat...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230987/ https://www.ncbi.nlm.nih.gov/pubmed/35744429 http://dx.doi.org/10.3390/mi13060815 |