Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The t...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Gyeongyeop, Ha, Jonghyeon, Kim, Kihyun, Bae, Hagyoul, Kim, Chong-Eun, Kim, Jungsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9231039/
https://www.ncbi.nlm.nih.gov/pubmed/35744515
http://dx.doi.org/10.3390/mi13060901

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9231039/
https://www.ncbi.nlm.nih.gov/pubmed/35744515
http://dx.doi.org/10.3390/mi13060901

Ejemplares similares