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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors
The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The t...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9231039/ https://www.ncbi.nlm.nih.gov/pubmed/35744515 http://dx.doi.org/10.3390/mi13060901 |