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Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model
The ammonothermal method is considered the most promising method of fabricating bulk gallium nitride (GaN) crystals. This paper improves the ammonothermal growth model by replacing the heater-long fixed temperature boundary with two resistance heaters and considering the real thermal boundary outsid...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9231043/ https://www.ncbi.nlm.nih.gov/pubmed/35744193 http://dx.doi.org/10.3390/ma15124137 |