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Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model

The ammonothermal method is considered the most promising method of fabricating bulk gallium nitride (GaN) crystals. This paper improves the ammonothermal growth model by replacing the heater-long fixed temperature boundary with two resistance heaters and considering the real thermal boundary outsid...

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Detalles Bibliográficos
Autores principales: Han, Pengfei, Gao, Bing, Song, Botao, Yu, Yue, Tang, Xia, Liu, Botao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9231043/
https://www.ncbi.nlm.nih.gov/pubmed/35744193
http://dx.doi.org/10.3390/ma15124137