Cargando…

Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model

The ammonothermal method is considered the most promising method of fabricating bulk gallium nitride (GaN) crystals. This paper improves the ammonothermal growth model by replacing the heater-long fixed temperature boundary with two resistance heaters and considering the real thermal boundary outsid...

Descripción completa

Detalles Bibliográficos
Autores principales:	Han, Pengfei, Gao, Bing, Song, Botao, Yu, Yue, Tang, Xia, Liu, Botao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9231043/ https://www.ncbi.nlm.nih.gov/pubmed/35744193 http://dx.doi.org/10.3390/ma15124137

Ejemplares similares

Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation
por: Han, Pengfei, et al.
Publicado: (2022)

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals
por: Kirste, Lutz, et al.
Publicado: (2022)

The Effect of the Crucible on the Temperature Distribution for the Growth of a Large Size AlN Single Crystal
por: Yu, Yue, et al.
Publicado: (2021)

Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN
por: Gaubas, E., et al.
Publicado: (2019)

Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
por: Key, Daryl, et al.
Publicado: (2019)

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography
por: Kirste, Lutz, et al.
Publicado: (2021)

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions
por: Schimmel, Saskia, et al.
Publicado: (2023)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN
por: Schimmel, Saskia, et al.
Publicado: (2022)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method
por: Wu, Wenxiao, et al.
Publicado: (2023)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472
Publicado: (2021)

Crystalline Nitridophosphates by Ammonothermal Synthesis
por: Mallmann, Mathias, et al.
Publicado: (2020)

Optimization of Ternary In(x)Ga(1-x)N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
por: Lin, Yu-Chung, et al.
Publicado: (2023)

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate
por: Johar, Muhammad Ali, et al.
Publicado: (2020)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
por: Zhang, Lei, et al.
Publicado: (2014)

Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
por: Yu, Yue, et al.
Publicado: (2020)

Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
por: Sochacki, Tomasz, et al.
Publicado: (2023)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells
por: Chouchen, Bilel, et al.
Publicado: (2019)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires
por: Park, Ji-Hyeon, et al.
Publicado: (2016)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

MOCVD Growth and Characterization of Be-Doped GaN
por: McEwen, Benjamin, et al.
Publicado: (2022)

Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters
por: Tan, Chee-Keong, et al.
Publicado: (2016)

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
por: Rong, X., et al.
Publicado: (2015)

Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells
por: Naskar, Nilanjon, et al.
Publicado: (2020)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Nanoscale anisotropic plastic deformation in single crystal GaN
por: Huang, Jun, et al.
Publicado: (2012)

Dislocation luminescence in GaN single crystals under nanoindentation
por: Huang, Jun, et al.
Publicado: (2014)

Room-Temperature Plasticity of a Nanosized GaN Crystal
por: Fujikane, Masaki, et al.
Publicado: (2021)

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
por: Amilusik, Mikolaj, et al.
Publicado: (2022)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor
por: Song, Botao, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_s92eukq72r2tboisbn5hdslqco