Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics

[Image: see text] Using the excess energy of charge carriers excited above the band edge (hot carriers) could pave the way for optoelectronic devices, such as photovoltaics exceeding the Shockley–Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise as a platform for hot-...

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Detalles Bibliográficos
Autores principales: Fast, Jonatan, Liu, Yen-Po, Chen, Yang, Samuelson, Lars, Burke, Adam M., Linke, Heiner, Mikkelsen, Anders
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9245483/
https://www.ncbi.nlm.nih.gov/pubmed/35783345
http://dx.doi.org/10.1021/acsaem.2c01208

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9245483/
https://www.ncbi.nlm.nih.gov/pubmed/35783345
http://dx.doi.org/10.1021/acsaem.2c01208

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