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Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics
[Image: see text] Using the excess energy of charge carriers excited above the band edge (hot carriers) could pave the way for optoelectronic devices, such as photovoltaics exceeding the Shockley–Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise as a platform for hot-...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9245483/ https://www.ncbi.nlm.nih.gov/pubmed/35783345 http://dx.doi.org/10.1021/acsaem.2c01208 |