Cargando…
Optimization of thermal field of 150 mm SiC crystal growth by PVT method
The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical fields in the growth process were modeled and s...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9264332/ https://www.ncbi.nlm.nih.gov/pubmed/35865196 http://dx.doi.org/10.1039/d2ra02875a |