Benchtop Electrochemical Growth and Controlled Alloying of Polycrystalline In(x)Ga(1–x)As Thin Films

[Image: see text] Compared to Si, GaAs offers unique material advantages such as high carrier mobility and energy conversion efficiency, making GaAs a leading competitor to replace Si on several technological fronts related to optoelectronics and solar energy conversion. Alloying the GaAs lattice wi...

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Detalles Bibliográficos
Autores principales: Lindsey, Zachary R., West, Malachi, Jacobson, Peter, Ray, John Robert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9267157/
https://www.ncbi.nlm.nih.gov/pubmed/35818388
http://dx.doi.org/10.1021/acs.cgd.2c00241

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9267157/
https://www.ncbi.nlm.nih.gov/pubmed/35818388
http://dx.doi.org/10.1021/acs.cgd.2c00241

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