Stress Component Decoupling Analysis Based on Large Numerical Aperture Objective Lens, an Impractical Approach

Micro Raman spectroscopy is an effective method to quantitatively analyse the internal stress of semiconductor materials and structures. However, the decoupling analysis of the stress components for {100} monocrystalline silicon (c-Si) remains difficult. In the work outlined, physical and simulation...

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Detalles Bibliográficos
Autores principales: Chang, Ying, Fu, Donghui, Sun, Mingyuan, He, Saisai, Qiu, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9267607/
https://www.ncbi.nlm.nih.gov/pubmed/35806739
http://dx.doi.org/10.3390/ma15134616

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9267607/
https://www.ncbi.nlm.nih.gov/pubmed/35806739
http://dx.doi.org/10.3390/ma15134616

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