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Stress Component Decoupling Analysis Based on Large Numerical Aperture Objective Lens, an Impractical Approach
Micro Raman spectroscopy is an effective method to quantitatively analyse the internal stress of semiconductor materials and structures. However, the decoupling analysis of the stress components for {100} monocrystalline silicon (c-Si) remains difficult. In the work outlined, physical and simulation...
Autores principales: | Chang, Ying, Fu, Donghui, Sun, Mingyuan, He, Saisai, Qiu, Wei |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9267607/ https://www.ncbi.nlm.nih.gov/pubmed/35806739 http://dx.doi.org/10.3390/ma15134616 |
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