Reset First Resistive Switching in Ni(1−x)O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric Ni(1−x)O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni(1−x)O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics with...

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Detalles Bibliográficos
Autores principales: Kim, Dae-woo, Kim, Tae-ho, Kim, Jae-yeon, Sohn, Hyun-chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268175/
https://www.ncbi.nlm.nih.gov/pubmed/35808068
http://dx.doi.org/10.3390/nano12132231

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268175/
https://www.ncbi.nlm.nih.gov/pubmed/35808068
http://dx.doi.org/10.3390/nano12132231

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