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Reset First Resistive Switching in Ni(1−x)O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering
Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric Ni(1−x)O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni(1−x)O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics with...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268175/ https://www.ncbi.nlm.nih.gov/pubmed/35808068 http://dx.doi.org/10.3390/nano12132231 |